High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

Sequential layers of the high‐k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li‐doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin‐film transistors are fabricated with operating voltages below 6 V and maximum...

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Veröffentlicht in:Advanced materials (Weinheim) 2011-04, Vol.23 (16), p.1894-1898
Hauptverfasser: Adamopoulos, George, Thomas, Stuart, Wöbkenberg, Paul H., Bradley, Donal D. C., McLachlan, Martyn A., Anthopoulos, Thomas D.
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Sprache:eng
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Zusammenfassung:Sequential layers of the high‐k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li‐doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin‐film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm2 V−1 s−1.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201003935