High-Resolution Field Effect Sensing of Ferroelectric Charges
Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface char...
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| Veröffentlicht in: | Nano Lett 2011-04, Vol.11 (4), p.1428-1433 |
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| container_title | Nano Lett |
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| creator | Ko, Hyoungsoo Ryu, Kyunghee Park, Hongsik Park, Chulmin Jeon, Daeyoung Kim, Yong Kwan Jung, Juhwan Min, Dong-Ki Kim, Yunseok Lee, Ho Nyung Park, Yoondong Shin, Hyunjung Hong, Seungbum |
| description | Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 μs. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 μC/cm2, which is equivalent to 1/20 electron per nanometer square at room temperature. |
| doi_str_mv | 10.1021/nl103372a |
| format | Article |
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(ANL), Argonne, IL (United States)</creatorcontrib><description>Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 μs. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 μC/cm2, which is equivalent to 1/20 electron per nanometer square at room temperature.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl103372a</identifier><identifier>PMID: 21375284</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; CHARGE DENSITY ; Computer Simulation ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; ELECTRODYNAMICS ; Electromagnetic Fields ; Electronics ; Exact sciences and technology ; FERROELECTRIC MATERIALS ; FIELD EFFECT TRANSISTORS ; Iron - chemistry ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; MATERIALS SCIENCE ; Micromanipulation - methods ; MICROSCOPY ; Models, Chemical ; Nanostructures - chemistry ; Nanostructures - radiation effects ; OTHER INSTRUMENTATION ; Physics ; PROBES ; RESOLUTION ; Semiconductor electronics. Microelectronics. Optoelectronics. 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(ANL), Argonne, IL (United States)</creatorcontrib><title>High-Resolution Field Effect Sensing of Ferroelectric Charges</title><title>Nano Lett</title><addtitle>Nano Lett</addtitle><description>Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 μs. 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Microelectronics. Optoelectronics. Solid state devices</subject><subject>Static Electricity</subject><subject>SURFACE PROPERTIES</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Transistors</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpt0E1LxDAQBuAgiqurB_-AFEHEQ3WSNm1y8CCLq4Ig-HEuaXayG-kmmrQH_72RXVcPniYMD2-Gl5AjChcUGL10HYWiqJnaInuUF5BXUrLtzVuUI7If4xsAyILDLhkxWtSciXKPXN3Z-SJ_wui7obfeZVOL3Sy7MQZ1nz2ji9bNM2-yKYbgsUvbYHU2Wagwx3hAdozqIh6u55i8Tm9eJnf5w-Pt_eT6IVdlUfc5GlEbhqIsldGGt0ymo5AaAA4MqKxaLDmKGdVVK3hVccoFSqFbYXSLNSvG5GSV62Nvm6htj3qhvXPpnIYCZQJ4Qmcr9B78x4Cxb5Y2auw65dAPsREVA6gkl0mer6QOPsaApnkPdqnCZ8pqvhttNo0me7xOHdolzjbyp8IETtdARa06E5TTNv66EqSkxR-ndGze_BBcauyfD78AP4GHnw</recordid><startdate>20110413</startdate><enddate>20110413</enddate><creator>Ko, Hyoungsoo</creator><creator>Ryu, Kyunghee</creator><creator>Park, Hongsik</creator><creator>Park, Chulmin</creator><creator>Jeon, Daeyoung</creator><creator>Kim, Yong Kwan</creator><creator>Jung, Juhwan</creator><creator>Min, Dong-Ki</creator><creator>Kim, Yunseok</creator><creator>Lee, Ho Nyung</creator><creator>Park, Yoondong</creator><creator>Shin, Hyunjung</creator><creator>Hong, Seungbum</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OTOTI</scope></search><sort><creationdate>20110413</creationdate><title>High-Resolution Field Effect Sensing of Ferroelectric Charges</title><author>Ko, Hyoungsoo ; Ryu, Kyunghee ; Park, Hongsik ; Park, Chulmin ; Jeon, Daeyoung ; Kim, Yong Kwan ; Jung, Juhwan ; Min, Dong-Ki ; Kim, Yunseok ; Lee, Ho Nyung ; Park, Yoondong ; Shin, Hyunjung ; Hong, Seungbum</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a437t-ef87f2e844afcf5b29698e1f005020196be45e8d1c6b85665158e98cb8fcbe723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>CHARGE DENSITY</topic><topic>Computer Simulation</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>ELECTRODYNAMICS</topic><topic>Electromagnetic Fields</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FERROELECTRIC MATERIALS</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>Iron - chemistry</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>MATERIALS SCIENCE</topic><topic>Micromanipulation - methods</topic><topic>MICROSCOPY</topic><topic>Models, Chemical</topic><topic>Nanostructures - chemistry</topic><topic>Nanostructures - radiation effects</topic><topic>OTHER INSTRUMENTATION</topic><topic>Physics</topic><topic>PROBES</topic><topic>RESOLUTION</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Static Electricity</topic><topic>SURFACE PROPERTIES</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ko, Hyoungsoo</creatorcontrib><creatorcontrib>Ryu, Kyunghee</creatorcontrib><creatorcontrib>Park, Hongsik</creatorcontrib><creatorcontrib>Park, Chulmin</creatorcontrib><creatorcontrib>Jeon, Daeyoung</creatorcontrib><creatorcontrib>Kim, Yong Kwan</creatorcontrib><creatorcontrib>Jung, Juhwan</creatorcontrib><creatorcontrib>Min, Dong-Ki</creatorcontrib><creatorcontrib>Kim, Yunseok</creatorcontrib><creatorcontrib>Lee, Ho Nyung</creatorcontrib><creatorcontrib>Park, Yoondong</creatorcontrib><creatorcontrib>Shin, Hyunjung</creatorcontrib><creatorcontrib>Hong, Seungbum</creatorcontrib><creatorcontrib>Argonne National Lab. (ANL), Argonne, IL (United States)</creatorcontrib><collection>Pascal-Francis</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV</collection><jtitle>Nano Lett</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ko, Hyoungsoo</au><au>Ryu, Kyunghee</au><au>Park, Hongsik</au><au>Park, Chulmin</au><au>Jeon, Daeyoung</au><au>Kim, Yong Kwan</au><au>Jung, Juhwan</au><au>Min, Dong-Ki</au><au>Kim, Yunseok</au><au>Lee, Ho Nyung</au><au>Park, Yoondong</au><au>Shin, Hyunjung</au><au>Hong, Seungbum</au><aucorp>Argonne National Lab. (ANL), Argonne, IL (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Resolution Field Effect Sensing of Ferroelectric Charges</atitle><jtitle>Nano Lett</jtitle><addtitle>Nano Lett</addtitle><date>2011-04-13</date><risdate>2011</risdate><volume>11</volume><issue>4</issue><spage>1428</spage><epage>1433</epage><pages>1428-1433</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 μs. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 μC/cm2, which is equivalent to 1/20 electron per nanometer square at room temperature.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>21375284</pmid><doi>10.1021/nl103372a</doi><tpages>6</tpages></addata></record> |
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| ispartof | Nano Lett, 2011-04, Vol.11 (4), p.1428-1433 |
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| subjects | Applied sciences CHARGE DENSITY Computer Simulation Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties ELECTRODYNAMICS Electromagnetic Fields Electronics Exact sciences and technology FERROELECTRIC MATERIALS FIELD EFFECT TRANSISTORS Iron - chemistry Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties MATERIALS SCIENCE Micromanipulation - methods MICROSCOPY Models, Chemical Nanostructures - chemistry Nanostructures - radiation effects OTHER INSTRUMENTATION Physics PROBES RESOLUTION Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Static Electricity SURFACE PROPERTIES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Transistors |
| title | High-Resolution Field Effect Sensing of Ferroelectric Charges |
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