Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation
The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation,...
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| Veröffentlicht in: | IEEE transactions on electron devices 2011-01, Vol.58 (1), p.87-94 |
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| container_title | IEEE transactions on electron devices |
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| creator | Harvard, E Brown, R Shealy, J R |
| description | The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic termination on the load pull were also studied. Significant improvements in the power-added efficiency were demonstrated. |
| doi_str_mv | 10.1109/TED.2010.2084370 |
| format | Article |
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It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic termination on the load pull were also studied. Significant improvements in the power-added efficiency were demonstrated.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2084370</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium nitrides ; Applied sciences ; Capacitance ; Devices ; Drains ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Gallium nitrides ; GaN ; Harmonic analysis ; Logic gates ; Microwave and submillimeter wave devices, electron transfer devices ; microwave power FETs ; MODFETs ; Other multijunction devices. Power transistors. Thyristors ; Passivation ; Performance evaluation ; Resistance ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; State of the art ; Transistors ; Tuners</subject><ispartof>IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.87-94</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic termination on the load pull were also studied. Significant improvements in the power-added efficiency were demonstrated.</description><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Devices</subject><subject>Drains</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Harmonic analysis</subject><subject>Logic gates</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>microwave power FETs</subject><subject>MODFETs</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Passivation</subject><subject>Performance evaluation</subject><subject>Resistance</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>State of the art</subject><subject>Transistors</subject><subject>Tuners</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LAzEQhoMoWKt3wcuCiKfVJJPPY9HaCrUWrXhc0m2ike1Gk63Qf2-kxYOHYRjmeYfhQeiU4CtCsL6eD2-vKM4TxYqBxHuoRziXpRZM7KMexkSVGhQcoqOUPvIoGKM99DSz0YW4Mm1ti-CKQTMy0-tcxdi_vZfDxtZdDG3xEBa-8d2mmEfTJp-6EFPx6rv3nHj202JmUvLfpvOhPUYHzjTJnux6H73cDec343LyOLq_GUzKGjh0paZUKM6VpNKx_A8zhi0UXy4AwC5F7RTTRkor3VI5SjTD3IIGTQg1BFMBfXS5vfsZw9fapq5a-VTbpjGtDetUKUE4A4ZlJs__kR9hHdv8XEUwYKIVo5ApvKXqGFKK1lWf0a9M3GSo-nVcZcfVr-Nq5zhHLnaHTapN47Kb2qe_HAXJhAKSubMt5621f2suCBDB4QeKC4GU</recordid><startdate>201101</startdate><enddate>201101</enddate><creator>Harvard, E</creator><creator>Brown, R</creator><creator>Shealy, J R</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Harmonic analysis</topic><topic>Logic gates</topic><topic>Microwave and submillimeter wave devices, electron transfer devices</topic><topic>microwave power FETs</topic><topic>MODFETs</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Passivation</topic><topic>Performance evaluation</topic><topic>Resistance</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>State of the art</topic><topic>Transistors</topic><topic>Tuners</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harvard, E</creatorcontrib><creatorcontrib>Brown, R</creatorcontrib><creatorcontrib>Shealy, J R</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEL</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Corrosion Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Harvard, E</au><au>Brown, R</au><au>Shealy, J R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-01</date><risdate>2011</risdate><volume>58</volume><issue>1</issue><spage>87</spage><epage>94</epage><pages>87-94</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic termination on the load pull were also studied. Significant improvements in the power-added efficiency were demonstrated.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2084370</doi><tpages>8</tpages></addata></record> |
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| subjects | Aluminum gallium nitrides Applied sciences Capacitance Devices Drains Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitrides GaN Harmonic analysis Logic gates Microwave and submillimeter wave devices, electron transfer devices microwave power FETs MODFETs Other multijunction devices. Power transistors. Thyristors Passivation Performance evaluation Resistance Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices State of the art Transistors Tuners |
| title | Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation |
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