Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation

The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation,...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-01, Vol.58 (1), p.87-94
Hauptverfasser:	Harvard, E, Brown, R, Shealy, J R
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied sciences Capacitance Devices Drains Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitrides GaN Harmonic analysis Logic gates Microwave and submillimeter wave devices, electron transfer devices microwave power FETs MODFETs Other multijunction devices. Power transistors. Thyristors Passivation Performance evaluation Resistance Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices State of the art Transistors Tuners
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Beschreibung
Zusammenfassung:	The performance of AlGaN/GaN high-electron mobility transistors that were passivated with AlSiN and SiN and fabricated side by side has been studied. It is found that the AlSiN passivation produced state-of-the-art devices, improving both small- and large-signal performance over the SiN passivation, particularly at higher drain bias. With large-signal excitation at 10 GHz, the effects of second-harmonic termination on the load pull were also studied. Significant improvements in the power-added efficiency were demonstrated.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2010.2084370