Effect of the oxygen partial pressure on the microstructure and optical properties of ZnO:Cu films

Cu-doped zinc oxide (ZnO:Cu) films were deposited on Si substrates using radio frequency reactive magnetron sputtering at different oxygen partial pressures. The effect of oxygen partial pressure on the microstructures and optical properties of ZnO:Cu thin films were systematically investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and fluorescence spectrophotometer. The results indicated that the grain orientation of the films was promoted by appropriate oxygen partial pressures. And with increasing oxygen partial pressure, the compressive stress of the films increased first and then decreased. The photoluminescence (PL) of the samples were measured at room temperature. A violet peak, two blue peaks and a green peak were observed from the PL spectra of the four samples. The origin of these emissions was discussed and the mechanism of violet emission of ZnO:Cu thin films were suggested. ► In this paper, ZnO:Cu thin films with c-axis preferred orientation were prepared on Si substrates by radio frequency magnetron sputtering technique. ► XRD and AFM measurements indicated that the grain orientation of the films was promoted by appropriate oxygen partial pressures. ► And with increasing oxygen ratio, the compressive stress of the films increased first and then decreased. ► A violet peak, two blue peaks and a green peak were observed from the PL spectra of the four samples. The origin of these emissions was discussed.