High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibi...

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Veröffentlicht in:IEEE electron device letters 2011-02, Vol.32 (2), p.143-145
Hauptverfasser: Lesecq, M, Hoel, V, Lecavelier des Etangs-Levallois, A, Pichonat, E, Douvry, Y, De Jaeger, J C
Format: Artikel
Sprache:eng
Schlagworte:
Adhesive flexible tape
Adhesives
Aluminum gallium nitride
Density
Devices
Direct current
Drains
Gallium nitride
Gallium nitrides
GaN
HEMTs
high-electron-mobility transistors (HEMTs)
MODFETs
Semiconductor devices
Silicon
Strain
Substrates
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Zusammenfassung:In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (L G = 2 μm) on a flexible tape are presented. Under 0.16 % strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands V DS = 18 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2091251