III-V Multiple-Gate Field-Effect Transistors With High-Mobility hbox In 0.7 hbox Ga 0.3 hbox As Channel and Epi-Controlled Retrograde-Doped Fin

We report an hbox In 0.7 hbox Ga 0.3 hbox As n-channel multiple-gate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduce...

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Veröffentlicht in:	IEEE electron device letters 2011-02, Vol.32 (2), p.146-148
Hauptverfasser:	Chin, Hock-Chun, Gong, Xiao, Wang, Lanxiang, Lee, Hock Koon, Shi, Luping, Yeo, Yee-Chia
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Devices Electrostatics Gallium Indium MOSFETs Semiconductor devices Transistors
Online-Zugang:	Volltext
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