III-V Multiple-Gate Field-Effect Transistors With High-Mobility hbox In 0.7 hbox Ga 0.3 hbox As Channel and Epi-Controlled Retrograde-Doped Fin

We report an hbox In 0.7 hbox Ga 0.3 hbox As n-channel multiple-gate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel potential and SCEs in the hbox In 0.7 hbox Ga 0.3 hbox As n-MuGFETs as compared with planar hbox In 0.7 hbox Ga 0.3 hbox As MOSFETs. The hbox In 0.7 hbox Ga 0.3 hbox As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 mu hbox A / mu hbox m at V rm DS = hbox 1.5 Unknown character hbox V and V rm GS - V T = hbox 3 Unknown character hbox V .