Rapid formation of tungsten oxide nanobundles with controllable morphology

▶ W18O49 nanobundles with controllable morphology were fabricated on Si substrates by MPECVD. ▶ The morphology of the nanobundles can be controlled by adjusting the reaction times. ▶ Nanowires DIA: 15–30nm, nanorods DIA: 40–60nm, nanoslabs THK: 30nm were formed at 1.5, 3, and 4min. ▶ MPECVD is highl...

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Veröffentlicht in:Applied surface science 2011-02, Vol.257 (8), p.3504-3509
Hauptverfasser: Hsieh, Y.T., Chen, U.S., Hsueh, S.H., Huang, M.W., Shih, H.C.
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Sprache:eng
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Zusammenfassung:▶ W18O49 nanobundles with controllable morphology were fabricated on Si substrates by MPECVD. ▶ The morphology of the nanobundles can be controlled by adjusting the reaction times. ▶ Nanowires DIA: 15–30nm, nanorods DIA: 40–60nm, nanoslabs THK: 30nm were formed at 1.5, 3, and 4min. ▶ MPECVD is highly effective and suitable for fabrication of various tungsten oxide nanobundles. Tungsten oxide (W18O49) nanobundles with controllable morphology were fabricated on Si substrates within 5min by microwave plasma-enhanced chemical vapor deposition (MPECVD). The crystal structure and chemical composition of these nanobundles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDS). The results of these characterizations confirmed the formation of W18O49 nanobundles with [010] as the major growth direction. SEM images showed that the nanobundles were several micrometers long with diameters of 20–500nm. The morphology of the nanobundles can be controlled by simply adjusting the reaction times to the desired level; nanowires (diameter: 15–30nm), nanorods (diameter: 40–60nm), and nanoslabs (thickness: 30nm) were formed at 1.5, 3, and 4min, respectively. With an increase in reaction times, the nanobundles steadily increased in dimensions to form nanoslabs. Thus, our results indicated that MPECVD is highly effective and suitable for fabrication of various tungsten oxide nanobundles.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2010.11.063