Preparation of Ca–Si–O films by chemical vapor deposition

Preparation of Ca–Si–O films by chemical vapor deposition

Ca–Si–O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca–S...

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Veröffentlicht in:Surface & coatings technology 2010-12, Vol.205 (7), p.2618-2623
Hauptverfasser: Nath, Shekhar, Tu, Rong, Goto, Takashi
Format: Artikel
Sprache:eng
Schlagworte:
Calcium
Calcium silicate
Chemical vapor deposition
Cross-disciplinary physics: materials science
rheology
Crystal phase
Crystals
CVD
Deposition
Deposition rate
Exact sciences and technology
Materials science
Microstructure
Physics
Precursors
Silicon
Silicon substrates
Surface treatments
Tetraethyl orthosilicate
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Zusammenfassung:Ca–Si–O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca–Si–O films were investigated. Three main phases, i.e., CaSiO3, Ca2SiO4 and Ca3SiO5, were obtained along with the CaO and amorphous phases. At Tsub=923 to 1023K and RSi/Ca=49, Ca2SiO4 film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing RSi/Ca. The maximum deposition rate was 240μmh−1 at Tsub=1323K and RSi/Ca=29.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2010.10.024