High extinction ratio 10 Gbit/s silicon optical modulator

High extinction ratio 10 Gbit/s silicon optical modulator

High speed and high extinction ratio silicon optical modulator using carrier depletion is experimentally demonstrated. The phase-shifter is a 1.8 mm-long PIPIN diode which is integrated in a Mach Zehnder interferometer. 8.1 dB Extinction Ratio at 10 Gbit/s is obtained simultaneously with optical los...

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Veröffentlicht in:Optics express 2011-03, Vol.19 (7), p.5827-5832
Hauptverfasser: Rasigade, Gilles, Ziebell, Melissa, Marris-Morini, Delphine, Fédéli, Jean-Marc, Milesi, Frédéric, Grosse, Philippe, Bouville, David, Cassan, Eric, Vivien, Laurent
Format: Artikel
Sprache:eng
Schlagworte:
Computer Communication Networks - instrumentation
Equipment Design
Equipment Failure Analysis
Interferometry - instrumentation
Microwaves
Semiconductors
Silicon - chemistry
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Zusammenfassung:High speed and high extinction ratio silicon optical modulator using carrier depletion is experimentally demonstrated. The phase-shifter is a 1.8 mm-long PIPIN diode which is integrated in a Mach Zehnder interferometer. 8.1 dB Extinction Ratio at 10 Gbit/s is obtained simultaneously with optical loss as low as 6 dB.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.19.005827