Circularly polarized light emission from semiconductor planar chiral nanostructures
We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a d...
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Veröffentlicht in: | Physical review letters 2011-02, Vol.106 (5), p.057402-057402, Article 057402 |
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creator | Konishi, Kuniaki Nomura, Masahiro Kumagai, Naoto Iwamoto, Satoshi Arakawa, Yasuhiko Kuwata-Gonokami, Makoto |
description | We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a degree of polarization as high as 26% at room temperature. A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results. |
doi_str_mv | 10.1103/physrevlett.106.057402 |
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The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a degree of polarization as high as 26% at room temperature. A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. 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title | Circularly polarized light emission from semiconductor planar chiral nanostructures |
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