Circularly polarized light emission from semiconductor planar chiral nanostructures

We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a d...

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Veröffentlicht in:Physical review letters 2011-02, Vol.106 (5), p.057402-057402, Article 057402
Hauptverfasser: Konishi, Kuniaki, Nomura, Masahiro, Kumagai, Naoto, Iwamoto, Satoshi, Arakawa, Yasuhiko, Kuwata-Gonokami, Makoto
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Sprache:eng
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Zusammenfassung:We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a degree of polarization as high as 26% at room temperature. A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.106.057402