High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

Non‐volatile memory cells using Co‐doped BaTiO3 as an active layer exhibit high‐performance unipolar resistive switching characteristics, with a resistance ratio over 104, retention time longer than 7 × 104 s, endurance over 105 cycles, and switching speed less than 10 ns/70 ns for SET/RESET. Under high electric field and large Joule heating, the easily varied valence of Co ions, the pre‐existing oxygen vacancies with sufficiently high density, and the local itinerant electrons introduced by the Co‐doping all favor the local metal‐insulator phase transition and therein the formation/rupture of conductive filaments, contributing to the stable resistive switching.