Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe
PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p‐type PbSe.
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Veröffentlicht in: | Advanced materials (Weinheim) 2011-03, Vol.23 (11), p.1366-1370 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p‐type PbSe. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.201004200 |