Magnetism at the V/Gd interface

Recent experimental investigations into the magnetic properties of V/Gd bilayers have shown that vanadium, which is nonmagnetic in the bulk, can acquire a magnetic moment in such systems. We have performed ab initio pseudopotential calculations to examine the magnetic behavior of V(110)/Gd(0001) bilayers for V layers with thicknesses up to 4 monolayers (ML). We considered both abrupt and atomic intermixed V/Gd interfaces. In both cases, the magnetic moment of the V layer is found to align antiparallel to the moment of the Gd layer, consistent with the experimental observation. However, the magnitude of the V moment at the abrupt interface is considerably smaller than the moments reported experimentally. In the presence of atomic intermixing, instead, substantially larger V moments are found, closer to the experimentally reported moments. On the basis of the calculated atomic and spin resolved density of states, we discuss the possible mechanism responsible for the observed Gd-V antiferromagnetic coupling.