Dependence of discharge path on breakdown characteristic of tunneling magnetroresistive read heads
The dependence of discharge path on the breakdown of a TMR head was performed by using human body model in 4 cases; R+ → R− (1st), R− → R+ (2nd), R+ → ground (3rd) and R− → ground (4th). It is seen by using the TMR read head equivalent circuit that, at first, the 1st and 3rd, and the 2nd and 4th, ca...
Gespeichert in:
Veröffentlicht in: | Journal of electrostatics 2010-12, Vol.68 (6), p.503-507 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The dependence of discharge path on the breakdown of a TMR head was performed by using human body model in 4 cases; R+ → R− (1st), R− → R+ (2nd), R+ → ground (3rd) and R− → ground (4th). It is seen by using the TMR read head equivalent circuit that, at first, the 1st and 3rd, and the 2nd and 4th, cases present an intrinsic and extrinsic breakdown, respectively. A potential difference across the substrate is thought to cause a different breakdown mechanism. Dependence of voltage polarity across the TMR sensor on asymmetry parameter is also discussed. |
---|---|
ISSN: | 0304-3886 1873-5738 |
DOI: | 10.1016/j.elstat.2010.06.012 |