Dependence of discharge path on breakdown characteristic of tunneling magnetroresistive read heads

The dependence of discharge path on the breakdown of a TMR head was performed by using human body model in 4 cases; R+ → R− (1st), R− → R+ (2nd), R+ → ground (3rd) and R− → ground (4th). It is seen by using the TMR read head equivalent circuit that, at first, the 1st and 3rd, and the 2nd and 4th, ca...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of electrostatics 2010-12, Vol.68 (6), p.503-507
Hauptverfasser: Jutong, N., Sompongse, D., Siritaratiwat, A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The dependence of discharge path on the breakdown of a TMR head was performed by using human body model in 4 cases; R+ → R− (1st), R− → R+ (2nd), R+ → ground (3rd) and R− → ground (4th). It is seen by using the TMR read head equivalent circuit that, at first, the 1st and 3rd, and the 2nd and 4th, cases present an intrinsic and extrinsic breakdown, respectively. A potential difference across the substrate is thought to cause a different breakdown mechanism. Dependence of voltage polarity across the TMR sensor on asymmetry parameter is also discussed.
ISSN:0304-3886
1873-5738
DOI:10.1016/j.elstat.2010.06.012