Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

► BDT is a novel device that is based upon an electron steering and a deflection effect. ► The BDT has a unique planar device capable to perform logic operations. ► The low gate capacitance should allow THz performance. ► BDT possesses both the positive and negative transconductance region. ► Ideal for frequency doubling at very high speeds. We present a detailed experimental and numerical study of a novel device so-called ballistic deflection transistor (BDT). Based on InGaAs–InAlAs heterostructure on InP substrate, BDT utilizes a two dimensional electron gas (2DEG) supported by a gated microstructure to achieve nonlinear electron transport at room temperature. BDT channel is larger than the mean free path implying that electron transport is not purely ballistic in nature. However, the asymmetric geometrical deflection combined with the electron steering caused by the applied differential gate voltages ultimately results in an attractive nonlinear behavior of the BDT useful for the working of the large scale devices at room temperature. Device performance was studied by analyzing the effects of several modifications of the BDT geometry and biasing conditions, both experimentally and by numerical simulations.