Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells. The epitaxial layers were characterised and exhibited bright photoluminescence up to room temperature. Prototype thermophotovoltaic cells were...

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Veröffentlicht in:Solar energy materials and solar cells 2011-02, Vol.95 (2), p.534-537
Hauptverfasser: Cheetham, K.J., Carrington, P.J., Cook, N.B., Krier, A.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Energy
Exact sciences and technology
LPE
Natural energy
Pentanary
Photoluminescence
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Thermophotovoltaic
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Zusammenfassung:The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells. The epitaxial layers were characterised and exhibited bright photoluminescence up to room temperature. Prototype thermophotovoltaic cells were fabricated, which were sensitive in the mid-infrared spectral range having cut-off wavelengths in the range 4.0–4.5 μm at room temperature.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2010.08.036