Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method

Low temperature (

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2010-07, Vol.312 (14), p.2145-2149
Hauptverfasser:	Kang, Se-Koo, Jeon, Min-Hwan, Park, Jong-Yoon, Lee, Hyoung-Cheol, Park, Byung-Jae, Yeon, Je-Kwan, Yeom, Geun-Young
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Surface structure A3. Chemical beam epitaxy A3. Polycrystalline deposition Applied sciences B1. Nanomaterials B2. Semiconducting silicon B3. High electron mobility transistors Beams (radiation) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition Electronics Energy of formation Equations of state, phase equilibria, and phase transitions Exact sciences and technology Heating Inert Materials science Methods of deposition of films and coatings film growth and epitaxy Nanocrystals Nanoscale materials and structures: fabrication and characterization Neutral beams Other topics in nanoscale materials and structures Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid-solid transitions Specific phase transitions Thin films Transistors
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