Surface plasmon enhanced GaAs thin film solar cells

As a new method to improve the light trapping in solar cells, surface plasmon resonance (SPR) has attracted considerable attention because of its unique characteristics. Several studies have been reported on the photocurrent improvement of Si solar cells by surface plasmons, while little research ha...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solar energy materials and solar cells 2011-02, Vol.95 (2), p.693-698
Hauptverfasser: Liu, Wen, Wang, Xiaodong, Li, Yueqiang, Geng, Zhaoxin, Yang, Fuhua, Li, Jinmin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:As a new method to improve the light trapping in solar cells, surface plasmon resonance (SPR) has attracted considerable attention because of its unique characteristics. Several studies have been reported on the photocurrent improvement of Si solar cells by surface plasmons, while little research has been done on III–V solar cells. In this work, we performed a systematic study of SPR on GaAs thin film solar cells with different sizes of Ag nanoparticles on the surface. The nanoparticles were fabricated by annealing E-beam evaporated Ag films in a N 2 atmosphere. It was found that the surface plasmon resonance wavelength does not undergo a simple red-shift with increasing metal thickness. It depends on the shape of the metal nanoparticles and the interparticle spacing. It is necessary to optimize the particle size to obtain an optimum enhancement throughout the visible spectrum for solar cells. We found that the optimum thickness of the Ag film was 6 nm under our experimental conditions. Furthermore, from the calculation based on the external quantum efficiency data, the short circuit current density of a GaAs solar cell with 6 nm Ag film after annealing was increased by 14.2% over that of the untreated solar cell.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2010.10.004