Channel scaling of hybrid GaN MOS-HEMTs

► We studied the effect of downscaling of the MOS channel of hybrid GaN MOS-HEMT. ► Numerical simulations were used in this study. ► The improvement in on-state conduction were quantified. ► A Ron,sp of 2.1 mΩ-cm2 was projected for MOS channel of 0.38 μm. ► We also found that GaN cap layer reduced short channel effects. In this paper, we have studied the effect of systematic downscaling of MOS channel length of the performance of the hybrid GaN MOS-HEMT with numerical simulations. The improvement in on-state conduction, together with concomitant short channel effects, including drain induced barrier lowering (DIBL) is quantitatively evaluated. A specific on-resistance of 2.1mΩcm2 has been projected for a MOS channel length of 0.38μm. We also have assessed the impact of high-k gate dielectrics, such as Al2O3. In addition, we have found that adding a thin GaN cap layer on top of AlGaN barrier can help reducing short channel effects.