Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge IOPselect
A unitary picture of the structural properties of MnxGe1 - x diluted alloys fabricated by either ion implantation or molecular beam epitaxy (MBE), at various growth temperatures (from 80 to about 623 K) and few per cent concentrations, is proposed. Analysis is based on synchrotron radiation x-ray ab...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2010-06, Vol.22 (21), p.216006-216006 |
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| container_title | Journal of physics. Condensed matter |
| container_volume | 22 |
| creator | Gunnella, R Morresi, L Pinto, N Di Cicco, A Ottaviano, L Passacantando, M Verna, A Impellizzeri, G Irrera, A d'Acapito, F |
| description | A unitary picture of the structural properties of MnxGe1 - x diluted alloys fabricated by either ion implantation or molecular beam epitaxy (MBE), at various growth temperatures (from 80 to about 623 K) and few per cent concentrations, is proposed. Analysis is based on synchrotron radiation x-ray absorption spectroscopy at the Mn K edge. When the growth temperature exceeds 330 K, the MBE samples show a high number of precipitated ferromagnetic nanoparticles, mainly Mn5Ge3, nucleated from the previous occupation of interstitial tetrahedral sites. Efficient substitution is observed in the case of MBE samples made by alternate layers of GeMn alloys grown at T |
| doi_str_mv | 10.1088/0953-8984/22/21/216006 |
| format | Article |
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Analysis is based on synchrotron radiation x-ray absorption spectroscopy at the Mn K edge. When the growth temperature exceeds 330 K, the MBE samples show a high number of precipitated ferromagnetic nanoparticles, mainly Mn5Ge3, nucleated from the previous occupation of interstitial tetrahedral sites. Efficient substitution is observed in the case of MBE samples made by alternate layers of GeMn alloys grown at T <= 433 K and undoped Ge thick layers. Similar good dilution properties are obtained by implanting Mn ions at low temperatures (80 K). Possible precursors to preferential mechanisms in the alloy formation are discussed on the basis of the present comparative study.</description><identifier>ISSN: 0953-8984</identifier><identifier>DOI: 10.1088/0953-8984/22/21/216006</identifier><language>eng</language><subject>Alloys ; Condensed matter ; Dilution ; Ferromagnetism ; Interstitials ; Manganese ; Molecular beam epitaxy ; X-rays</subject><ispartof>Journal of physics. 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Condensed matter</title><description>A unitary picture of the structural properties of MnxGe1 - x diluted alloys fabricated by either ion implantation or molecular beam epitaxy (MBE), at various growth temperatures (from 80 to about 623 K) and few per cent concentrations, is proposed. Analysis is based on synchrotron radiation x-ray absorption spectroscopy at the Mn K edge. When the growth temperature exceeds 330 K, the MBE samples show a high number of precipitated ferromagnetic nanoparticles, mainly Mn5Ge3, nucleated from the previous occupation of interstitial tetrahedral sites. Efficient substitution is observed in the case of MBE samples made by alternate layers of GeMn alloys grown at T <= 433 K and undoped Ge thick layers. Similar good dilution properties are obtained by implanting Mn ions at low temperatures (80 K). Possible precursors to preferential mechanisms in the alloy formation are discussed on the basis of the present comparative study.</description><subject>Alloys</subject><subject>Condensed matter</subject><subject>Dilution</subject><subject>Ferromagnetism</subject><subject>Interstitials</subject><subject>Manganese</subject><subject>Molecular beam epitaxy</subject><subject>X-rays</subject><issn>0953-8984</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNjLtOAzEQRV2ARCD8ApqOatnZV3BoEY8IUCjoI8eeBCOvvXhmJcLXE0WIGulKt7jnHqUuKryqUOsS511T6Lluy7ou62qfGeLsSE3-hhN1yvyBiK1u2onKz8ma4L-N-BQhbUDeCVwaTBTwER7o5iWC82EUctCbbSTxFph6b1N0o5WUGdY7-Cqy2YFZc8rDQWXkoNq_n4DclmCxfGUKZGWqjjcmMJ3_9pm6vL97u30shpw-R2JZ9Z4thWAipZFXuuuusdFV3fyf_AFDG1Pl</recordid><startdate>20100602</startdate><enddate>20100602</enddate><creator>Gunnella, R</creator><creator>Morresi, L</creator><creator>Pinto, N</creator><creator>Di Cicco, A</creator><creator>Ottaviano, L</creator><creator>Passacantando, M</creator><creator>Verna, A</creator><creator>Impellizzeri, G</creator><creator>Irrera, A</creator><creator>d'Acapito, F</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20100602</creationdate><title>Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge IOPselect</title><author>Gunnella, R ; Morresi, L ; Pinto, N ; Di Cicco, A ; Ottaviano, L ; Passacantando, M ; Verna, A ; Impellizzeri, G ; Irrera, A ; d'Acapito, F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_8557038123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Alloys</topic><topic>Condensed matter</topic><topic>Dilution</topic><topic>Ferromagnetism</topic><topic>Interstitials</topic><topic>Manganese</topic><topic>Molecular beam epitaxy</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gunnella, R</creatorcontrib><creatorcontrib>Morresi, L</creatorcontrib><creatorcontrib>Pinto, N</creatorcontrib><creatorcontrib>Di Cicco, A</creatorcontrib><creatorcontrib>Ottaviano, L</creatorcontrib><creatorcontrib>Passacantando, M</creatorcontrib><creatorcontrib>Verna, A</creatorcontrib><creatorcontrib>Impellizzeri, G</creatorcontrib><creatorcontrib>Irrera, A</creatorcontrib><creatorcontrib>d'Acapito, F</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gunnella, R</au><au>Morresi, L</au><au>Pinto, N</au><au>Di Cicco, A</au><au>Ottaviano, L</au><au>Passacantando, M</au><au>Verna, A</au><au>Impellizzeri, G</au><au>Irrera, A</au><au>d'Acapito, F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge IOPselect</atitle><jtitle>Journal of physics. Condensed matter</jtitle><date>2010-06-02</date><risdate>2010</risdate><volume>22</volume><issue>21</issue><spage>216006</spage><epage>216006</epage><pages>216006-216006</pages><issn>0953-8984</issn><abstract>A unitary picture of the structural properties of MnxGe1 - x diluted alloys fabricated by either ion implantation or molecular beam epitaxy (MBE), at various growth temperatures (from 80 to about 623 K) and few per cent concentrations, is proposed. Analysis is based on synchrotron radiation x-ray absorption spectroscopy at the Mn K edge. When the growth temperature exceeds 330 K, the MBE samples show a high number of precipitated ferromagnetic nanoparticles, mainly Mn5Ge3, nucleated from the previous occupation of interstitial tetrahedral sites. Efficient substitution is observed in the case of MBE samples made by alternate layers of GeMn alloys grown at T <= 433 K and undoped Ge thick layers. Similar good dilution properties are obtained by implanting Mn ions at low temperatures (80 K). Possible precursors to preferential mechanisms in the alloy formation are discussed on the basis of the present comparative study.</abstract><doi>10.1088/0953-8984/22/21/216006</doi></addata></record> |
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| ispartof | Journal of physics. Condensed matter, 2010-06, Vol.22 (21), p.216006-216006 |
| issn | 0953-8984 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Alloys Condensed matter Dilution Ferromagnetism Interstitials Manganese Molecular beam epitaxy X-rays |
| title | Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge IOPselect |
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