Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge IOPselect

Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge IOPselect

A unitary picture of the structural properties of MnxGe1 - x diluted alloys fabricated by either ion implantation or molecular beam epitaxy (MBE), at various growth temperatures (from 80 to about 623 K) and few per cent concentrations, is proposed. Analysis is based on synchrotron radiation x-ray ab...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. Condensed matter 2010-06, Vol.22 (21), p.216006-216006
Hauptverfasser: Gunnella, R, Morresi, L, Pinto, N, Di Cicco, A, Ottaviano, L, Passacantando, M, Verna, A, Impellizzeri, G, Irrera, A, d'Acapito, F
Format: Artikel
Sprache:eng
Schlagworte:
Alloys
Condensed matter
Dilution
Ferromagnetism
Interstitials
Manganese
Molecular beam epitaxy
X-rays
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A unitary picture of the structural properties of MnxGe1 - x diluted alloys fabricated by either ion implantation or molecular beam epitaxy (MBE), at various growth temperatures (from 80 to about 623 K) and few per cent concentrations, is proposed. Analysis is based on synchrotron radiation x-ray absorption spectroscopy at the Mn K edge. When the growth temperature exceeds 330 K, the MBE samples show a high number of precipitated ferromagnetic nanoparticles, mainly Mn5Ge3, nucleated from the previous occupation of interstitial tetrahedral sites. Efficient substitution is observed in the case of MBE samples made by alternate layers of GeMn alloys grown at T
ISSN:0953-8984
DOI:10.1088/0953-8984/22/21/216006