Characterization of bulk GaN crystals grown from solution at near atmospheric pressure
The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810 °C and near atmospheric pressure ∼0.14 MPa, have been investigated using low temperature X-band (∼9.5 GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy...
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creator | Garces, N.Y. Feigelson, B.N. Freitas, J.A. Kim, Jihyun Myers-Ward, R. Glaser, E.R. |
description | The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810
°C and near atmospheric pressure ∼0.14
MPa, have been investigated using low temperature X-band (∼9.5
GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025
mm
3, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5
mm
3) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the
c-axis, with approximate
g-values,
g
∥=1.951 and
g
⊥=1.948 and a peak-to-peak linewidth of∼4.0
G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality. |
doi_str_mv | 10.1016/j.jcrysgro.2010.04.012 |
format | Article |
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°C and near atmospheric pressure ∼0.14
MPa, have been investigated using low temperature X-band (∼9.5
GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025
mm
3, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5
mm
3) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the
c-axis, with approximate
g-values,
g
∥=1.951 and
g
⊥=1.948 and a peak-to-peak linewidth of∼4.0
G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.04.012</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>A1. Characterization ; Atmospheric pressure ; B1. Nitrides ; B2. Semiconducting III–V materials ; Barometric pressure ; Crystals ; Electron paramagnetic resonance ; Gallium nitrides ; Imaging ; Impurities ; Photoluminescence ; Spectroscopy</subject><ispartof>Journal of crystal growth, 2010-09, Vol.312 (18), p.2558-2563</ispartof><rights>2010 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-8a45f95a1317d2a8c5f8fbef844528f93e92d1f85da64f1c0032f4e5d2f7e1ca3</citedby><cites>FETCH-LOGICAL-c410t-8a45f95a1317d2a8c5f8fbef844528f93e92d1f85da64f1c0032f4e5d2f7e1ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2010.04.012$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Garces, N.Y.</creatorcontrib><creatorcontrib>Feigelson, B.N.</creatorcontrib><creatorcontrib>Freitas, J.A.</creatorcontrib><creatorcontrib>Kim, Jihyun</creatorcontrib><creatorcontrib>Myers-Ward, R.</creatorcontrib><creatorcontrib>Glaser, E.R.</creatorcontrib><title>Characterization of bulk GaN crystals grown from solution at near atmospheric pressure</title><title>Journal of crystal growth</title><description>The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810
°C and near atmospheric pressure ∼0.14
MPa, have been investigated using low temperature X-band (∼9.5
GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025
mm
3, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5
mm
3) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the
c-axis, with approximate
g-values,
g
∥=1.951 and
g
⊥=1.948 and a peak-to-peak linewidth of∼4.0
G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality.</description><subject>A1. Characterization</subject><subject>Atmospheric pressure</subject><subject>B1. Nitrides</subject><subject>B2. Semiconducting III–V materials</subject><subject>Barometric pressure</subject><subject>Crystals</subject><subject>Electron paramagnetic resonance</subject><subject>Gallium nitrides</subject><subject>Imaging</subject><subject>Impurities</subject><subject>Photoluminescence</subject><subject>Spectroscopy</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkLFOwzAQhi0EEqXwCsgbU8rZsRt3A1VQkCpYgNVynTNNSONgJ6Dy9LgUZpY76fT_n3QfIecMJgzY9LKe1DZs42vwEw7pCGICjB-QEVNFnkkAfkhGafIMuFDH5CTGGiA1GYzIy3xtgrE9hurL9JVvqXd0NTRvdGEe6I7bmybSBP9sqQt-Q6Nvhp-g6WmLJqS98bFbJ4KlXcAYh4Cn5MilHp797jF5vr15mt9ly8fF_fx6mVnBoM-UEdLNpGE5K0pulJVOuRU6JYTkys1ynPGSOSVLMxWOWYCcO4Gy5K5AZk0-Jhd7bhf8-4Cx15sqWmwa06IfolZSFsAViJSc7pM2-BgDOt2FamPCVjPQO4-61n8e9c6jBqGTx1S82hcx_fFRYdDRVthaLKuAttelr_5DfAMYOoFe</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Garces, N.Y.</creator><creator>Feigelson, B.N.</creator><creator>Freitas, J.A.</creator><creator>Kim, Jihyun</creator><creator>Myers-Ward, R.</creator><creator>Glaser, E.R.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100901</creationdate><title>Characterization of bulk GaN crystals grown from solution at near atmospheric pressure</title><author>Garces, N.Y. ; Feigelson, B.N. ; Freitas, J.A. ; Kim, Jihyun ; Myers-Ward, R. ; Glaser, E.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-8a45f95a1317d2a8c5f8fbef844528f93e92d1f85da64f1c0032f4e5d2f7e1ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>A1. Characterization</topic><topic>Atmospheric pressure</topic><topic>B1. Nitrides</topic><topic>B2. Semiconducting III–V materials</topic><topic>Barometric pressure</topic><topic>Crystals</topic><topic>Electron paramagnetic resonance</topic><topic>Gallium nitrides</topic><topic>Imaging</topic><topic>Impurities</topic><topic>Photoluminescence</topic><topic>Spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Garces, N.Y.</creatorcontrib><creatorcontrib>Feigelson, B.N.</creatorcontrib><creatorcontrib>Freitas, J.A.</creatorcontrib><creatorcontrib>Kim, Jihyun</creatorcontrib><creatorcontrib>Myers-Ward, R.</creatorcontrib><creatorcontrib>Glaser, E.R.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Garces, N.Y.</au><au>Feigelson, B.N.</au><au>Freitas, J.A.</au><au>Kim, Jihyun</au><au>Myers-Ward, R.</au><au>Glaser, E.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of bulk GaN crystals grown from solution at near atmospheric pressure</atitle><jtitle>Journal of crystal growth</jtitle><date>2010-09-01</date><risdate>2010</risdate><volume>312</volume><issue>18</issue><spage>2558</spage><epage>2563</epage><pages>2558-2563</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810
°C and near atmospheric pressure ∼0.14
MPa, have been investigated using low temperature X-band (∼9.5
GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025
mm
3, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5
mm
3) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the
c-axis, with approximate
g-values,
g
∥=1.951 and
g
⊥=1.948 and a peak-to-peak linewidth of∼4.0
G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.04.012</doi><tpages>6</tpages></addata></record> |
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subjects | A1. Characterization Atmospheric pressure B1. Nitrides B2. Semiconducting III–V materials Barometric pressure Crystals Electron paramagnetic resonance Gallium nitrides Imaging Impurities Photoluminescence Spectroscopy |
title | Characterization of bulk GaN crystals grown from solution at near atmospheric pressure |
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