Characterization of bulk GaN crystals grown from solution at near atmospheric pressure
The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810 °C and near atmospheric pressure ∼0.14 MPa, have been investigated using low temperature X-band (∼9.5 GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy...
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Veröffentlicht in: | Journal of crystal growth 2010-09, Vol.312 (18), p.2558-2563 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810
°C and near atmospheric pressure ∼0.14
MPa, have been investigated using low temperature X-band (∼9.5
GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025
mm
3, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5
mm
3) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the
c-axis, with approximate
g-values,
g
∥=1.951 and
g
⊥=1.948 and a peak-to-peak linewidth of∼4.0
G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2010.04.012 |