A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

In this paper, we report a metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure with a ZrO2 charge-trapping layer for non-volatile memory application. The superiority of this device over the traditional metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices is much better data retention and enhanced program/erase efficien...

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Veröffentlicht in:	Semiconductor science and technology 2010-05, Vol.25 (5), p.055013-055013
Hauptverfasser:	Liu, Jing, Wang, Qin, Long, Shibing, Zhang, Manhong, Liu, Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied sciences Design. Technologies. Operation analysis. Testing Devices Electronics Endurance Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Silicon dioxide Silicon nitride Windows (intervals) Zirconium dioxide
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Zusammenfassung:	In this paper, we report a metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure with a ZrO2 charge-trapping layer for non-volatile memory application. The superiority of this device over the traditional metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices is much better data retention and enhanced program/erase efficiency. The MAZOS device exhibits excellent memory characteristics, including a large memory window of 7.1 V under plus or minus 11 V capacitance--voltage sweep, and a greatly improved data retention (only 16% charge loss for 10 years time) along with good endurance. The MAZOS device has a strong potential for future high-performance non-volatile memory application.
ISSN:	0268-1242 1361-6641
DOI:	10.1088/0268-1242/25/5/055013