Switching properties of vanadium doped TiO2 thin films prepared by magnetron sputtering
In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-depe...
Gespeichert in:
Veröffentlicht in: | Thin solid films 2009-12, Vol.518 (4), p.1095-1098 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-dependent electrical and optical transmission spectroscopy measurements. The structural investigations indicate that thin films were XRD-amorphous. Reversible thermoresistance effect, recorded at 52Ac1aaAC was found from electrical measurements. The prepared coatings were well transparent in the visible part of the light spectrum from ca. 350aanm. |
---|---|
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2009.03.224 |