Switching properties of vanadium doped TiO2 thin films prepared by magnetron sputtering

In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-depe...

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Veröffentlicht in:Thin solid films 2009-12, Vol.518 (4), p.1095-1098
Hauptverfasser: Domaradzki, J., Kaczmarek, D., Prociow, E.L.
Format: Artikel
Sprache:eng
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Zusammenfassung:In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-dependent electrical and optical transmission spectroscopy measurements. The structural investigations indicate that thin films were XRD-amorphous. Reversible thermoresistance effect, recorded at 52Ac1aaAC was found from electrical measurements. The prepared coatings were well transparent in the visible part of the light spectrum from ca. 350aanm.
ISSN:0040-6090
DOI:10.1016/j.tsf.2009.03.224