Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)...

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Veröffentlicht in:	Optics Express 2011-02, Vol.19 (5), p.4182-4187
Hauptverfasser:	Verma, V B, Stevens, Martin J, Silverman, K L, Dias, N L, Garg, A, Coleman, J J, Mirin, R P
Format:	Artikel
Sprache:	eng
Schlagworte:	Arsenicals - chemistry Equipment Design Equipment Failure Analysis Gallium - chemistry Indium - chemistry Materials Testing Photons Quantum Dots solar (photovoltaic), solar (fuels), solid state lighting, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
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Beschreibung
Zusammenfassung:	We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0)=0.395±0.030, below the 0.5 limit necessary for classification as a single photon source.
ISSN:	1094-4087 1094-4087
DOI:	10.1364/OE.19.004182