Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, wi...

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Veröffentlicht in:Journal of the American Chemical Society 2011-03, Vol.133 (9), p.2816-2819
Hauptverfasser: Li, Xuesong, Magnuson, Carl W, Venugopal, Archana, Tromp, Rudolf M, Hannon, James B, Vogel, Eric M, Colombo, Luigi, Ruoff, Rodney S
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Sprache:eng
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Zusammenfassung:Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single crystals to be uniform monolayers with a low D-band intensity. The electron mobility of graphene films extracted from field-effect transistor measurements was found to be higher than 4000 cm2 V−1 s−1 at room temperature.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja109793s