Solution-Processed ZTO TFTs With Recessed Gate and Low Operating Voltage

Solution-Processed ZTO TFTs With Recessed Gate and Low Operating Voltage

We demonstrate solution-processed zinc tin oxide thin-film transistors (TFTs) with a patterned-gate configuration. High- k and solution-processed zirconium oxide (ZrO 2 ) was employed to lower down the operating voltage. Devices with recessed and nonrecessed gate electrodes were compared to study th...

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Veröffentlicht in:IEEE electron device letters 2010-12, Vol.31 (12), p.1410-1412
Hauptverfasser: Chen-Guan Lee, Dutta, S, Dodabalapur, A
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Devices
Dielectrics
Electric potential
Electrodes
Electronics
Exact sciences and technology
Gates
Leakage current
Logic gates
Low operating voltage
metal-oxide semiconductor
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
solution process
Surface morphology
Thin film transistors
thin-film transistors (TFTs)
Transistors
Voltage
Zinc
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Zusammenfassung:We demonstrate solution-processed zinc tin oxide thin-film transistors (TFTs) with a patterned-gate configuration. High- k and solution-processed zirconium oxide (ZrO 2 ) was employed to lower down the operating voltage. Devices with recessed and nonrecessed gate electrodes were compared to study the influence of gate surface relief on the performance of the solution-processed thin films. The TFTs with the recessed gate electrode operate at 5 V and have a threshold voltage of ~ 1 V, subthreshold slope of ~ 0.23 V/dec, saturation mobility of 2.5 cm 2 /V ·s, and on/off current ratio of > 10 6 .
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2081659