Electrical studies on bulk Se sub(96)Sn sub(4) semiconducting glass before and after gamma irradiation

Electrical studies on bulk Se sub(96)Sn sub(4) semiconducting glass before and after gamma irradiation

Bulk Se sub(96)Sn sub(4) chalcogenide glass was prepared by melt quenching technique and irradiated by different doses of 4, 8, 12, 24 and 33 kGy using super(60)Co gamma emitter. I-V characteristics were obtained for this glass, before and after gamma irradiation, in the temperature range 200-300 K....

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Veröffentlicht in:The Journal of physics and chemistry of solids 2010-11, Vol.71 (11), p.1534-1539
Hauptverfasser: Al-Bati, Sameer N, Lafi, Omar A, Imran, Mousa MA, Shaderma, Moh'd M
Format: Artikel
Sprache:eng
Schlagworte:
Activation energy
Density
Electric fields
Gamma irradiation
Gamma rays
Glass
Irradiation
Ohmic
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Zusammenfassung:Bulk Se sub(96)Sn sub(4) chalcogenide glass was prepared by melt quenching technique and irradiated by different doses of 4, 8, 12, 24 and 33 kGy using super(60)Co gamma emitter. I-V characteristics were obtained for this glass, before and after gamma irradiation, in the temperature range 200-300 K. Ohmic behavior was observed at low electric fields (
ISSN:0022-3697
DOI:10.1016/j.jpcs.2010.07.023