Tunneling conductance in gapped graphene-based normal metal–insulator–superconductor junctions: Case of massive Dirac electrons
We study the quantum transport property in a gapped graphene-based normal metal–insulator–superconductor junctions ( NG/ IG/ SG), in the limit of a thin barrier. The charged fermions in NG/ IG/ SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in nor...
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| Veröffentlicht in: | Physica. C, Superconductivity Superconductivity, 2010-12, Vol.470 (22), p.1981-1985 |
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| container_end_page | 1985 |
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| container_issue | 22 |
| container_start_page | 1981 |
| container_title | Physica. C, Superconductivity |
| container_volume | 470 |
| creator | Goudarzi, H. Sedghi, H. Khezerlou, M. Mabhouti, Kh |
| description | We study the quantum transport property in a gapped graphene-based normal metal–insulator–superconductor junctions (
NG/
IG/
SG), in the limit of a thin barrier. The charged fermions in
NG/
IG/
SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in normal-superconductor graphene-based junction and BTK formalism, the tunneling conductance’s in terms of some different electrostatic superconductor,
U
0 and barrier,
V
0 potential are obtained. Using the experimental based values of the Fermi energy in the
NG and
SG (
E
FN
and
E
FN
+
U
0, respectively), energy gap in graphene
2
mv
F
2
and superconducting order parameter,
Δ, it is shown that the conductance spectra of such system represent a new behavior, i.e. if we take
|
E
FN
-
mv
F
2
|
→
0
, it becomes as a step function of
V
0. This behavior of charge transportation can be considered as a nano switch. |
| doi_str_mv | 10.1016/j.physc.2010.08.010 |
| format | Article |
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NG/
IG/
SG), in the limit of a thin barrier. The charged fermions in
NG/
IG/
SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in normal-superconductor graphene-based junction and BTK formalism, the tunneling conductance’s in terms of some different electrostatic superconductor,
U
0 and barrier,
V
0 potential are obtained. Using the experimental based values of the Fermi energy in the
NG and
SG (
E
FN
and
E
FN
+
U
0, respectively), energy gap in graphene
2
mv
F
2
and superconducting order parameter,
Δ, it is shown that the conductance spectra of such system represent a new behavior, i.e. if we take
|
E
FN
-
mv
F
2
|
→
0
, it becomes as a step function of
V
0. This behavior of charge transportation can be considered as a nano switch.</description><identifier>ISSN: 0921-4534</identifier><identifier>EISSN: 1873-2143</identifier><identifier>DOI: 10.1016/j.physc.2010.08.010</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Barriers ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductance ; Exact sciences and technology ; Fermi surfaces ; Gapped graphene ; Graphene ; Massive Dirac electron ; Multilayers, superlattices , heterostructures ; Nanostructure ; Physics ; Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions ; Specular Andreev reflection ; Superconducting films and low-dimensional structures ; Superconductivity ; Tunneling ; Tunneling conductance</subject><ispartof>Physica. C, Superconductivity, 2010-12, Vol.470 (22), p.1981-1985</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-f8ac351d9a9ae77741999ff75cc74ff50e6eb2ad5327b5031bace387b0d9186a3</citedby><cites>FETCH-LOGICAL-c365t-f8ac351d9a9ae77741999ff75cc74ff50e6eb2ad5327b5031bace387b0d9186a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physc.2010.08.010$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23500881$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Goudarzi, H.</creatorcontrib><creatorcontrib>Sedghi, H.</creatorcontrib><creatorcontrib>Khezerlou, M.</creatorcontrib><creatorcontrib>Mabhouti, Kh</creatorcontrib><title>Tunneling conductance in gapped graphene-based normal metal–insulator–superconductor junctions: Case of massive Dirac electrons</title><title>Physica. C, Superconductivity</title><description>We study the quantum transport property in a gapped graphene-based normal metal–insulator–superconductor junctions (
NG/
IG/
SG), in the limit of a thin barrier. The charged fermions in
NG/
IG/
SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in normal-superconductor graphene-based junction and BTK formalism, the tunneling conductance’s in terms of some different electrostatic superconductor,
U
0 and barrier,
V
0 potential are obtained. Using the experimental based values of the Fermi energy in the
NG and
SG (
E
FN
and
E
FN
+
U
0, respectively), energy gap in graphene
2
mv
F
2
and superconducting order parameter,
Δ, it is shown that the conductance spectra of such system represent a new behavior, i.e. if we take
|
E
FN
-
mv
F
2
|
→
0
, it becomes as a step function of
V
0. This behavior of charge transportation can be considered as a nano switch.</description><subject>Barriers</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductance</subject><subject>Exact sciences and technology</subject><subject>Fermi surfaces</subject><subject>Gapped graphene</subject><subject>Graphene</subject><subject>Massive Dirac electron</subject><subject>Multilayers, superlattices , heterostructures</subject><subject>Nanostructure</subject><subject>Physics</subject><subject>Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions</subject><subject>Specular Andreev reflection</subject><subject>Superconducting films and low-dimensional structures</subject><subject>Superconductivity</subject><subject>Tunneling</subject><subject>Tunneling conductance</subject><issn>0921-4534</issn><issn>1873-2143</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kMGOFCEURYnRxHb0C9ywMa6qB4qqBkxcmB51TCZxM67JK-rRQ4eCEqommZ2Jn-Af-iUydselbC683HvJO4S85mzLGd9dHrfz3UOx25bVCVPbKk_IhispmpZ34inZMN3yputF95y8KOXI6uGab8jP2zVGDD4eqE1xXO0C0SL1kR5gnnGkhwzzHUZsBij1GVOeINAJFwi_f_zysawBlpTrvawz5nNJyvS4Rrv4FMs7uq9RmhydoBR_j_TKZ7AUA9olV8NL8sxBKPjqrBfk26ePt_vr5ubr5y_7DzeNFbt-aZwCK3o-atCAUsqOa62dk721snOuZ7jDoYWxF60ceib4ABaFkgMbNVc7EBfk7al3zun7imUxky8WQ4CIaS1GdbqTiktZneLktDmVktGZOfsJ8oPhzDwSN0fzl7h5JG6YMlVq6s25H4qF4HJF6cu_aCt6xpTi1ff-5MO67L3HbIr1WLGPPlckZkz-v__8AfAhnas</recordid><startdate>20101201</startdate><enddate>20101201</enddate><creator>Goudarzi, H.</creator><creator>Sedghi, H.</creator><creator>Khezerlou, M.</creator><creator>Mabhouti, Kh</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20101201</creationdate><title>Tunneling conductance in gapped graphene-based normal metal–insulator–superconductor junctions: Case of massive Dirac electrons</title><author>Goudarzi, H. ; Sedghi, H. ; Khezerlou, M. ; Mabhouti, Kh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-f8ac351d9a9ae77741999ff75cc74ff50e6eb2ad5327b5031bace387b0d9186a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Barriers</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductance</topic><topic>Exact sciences and technology</topic><topic>Fermi surfaces</topic><topic>Gapped graphene</topic><topic>Graphene</topic><topic>Massive Dirac electron</topic><topic>Multilayers, superlattices , heterostructures</topic><topic>Nanostructure</topic><topic>Physics</topic><topic>Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions</topic><topic>Specular Andreev reflection</topic><topic>Superconducting films and low-dimensional structures</topic><topic>Superconductivity</topic><topic>Tunneling</topic><topic>Tunneling conductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Goudarzi, H.</creatorcontrib><creatorcontrib>Sedghi, H.</creatorcontrib><creatorcontrib>Khezerlou, M.</creatorcontrib><creatorcontrib>Mabhouti, Kh</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. C, Superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Goudarzi, H.</au><au>Sedghi, H.</au><au>Khezerlou, M.</au><au>Mabhouti, Kh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunneling conductance in gapped graphene-based normal metal–insulator–superconductor junctions: Case of massive Dirac electrons</atitle><jtitle>Physica. C, Superconductivity</jtitle><date>2010-12-01</date><risdate>2010</risdate><volume>470</volume><issue>22</issue><spage>1981</spage><epage>1985</epage><pages>1981-1985</pages><issn>0921-4534</issn><eissn>1873-2143</eissn><abstract>We study the quantum transport property in a gapped graphene-based normal metal–insulator–superconductor junctions (
NG/
IG/
SG), in the limit of a thin barrier. The charged fermions in
NG/
IG/
SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in normal-superconductor graphene-based junction and BTK formalism, the tunneling conductance’s in terms of some different electrostatic superconductor,
U
0 and barrier,
V
0 potential are obtained. Using the experimental based values of the Fermi energy in the
NG and
SG (
E
FN
and
E
FN
+
U
0, respectively), energy gap in graphene
2
mv
F
2
and superconducting order parameter,
Δ, it is shown that the conductance spectra of such system represent a new behavior, i.e. if we take
|
E
FN
-
mv
F
2
|
→
0
, it becomes as a step function of
V
0. This behavior of charge transportation can be considered as a nano switch.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physc.2010.08.010</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-4534 |
| ispartof | Physica. C, Superconductivity, 2010-12, Vol.470 (22), p.1981-1985 |
| issn | 0921-4534 1873-2143 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_849478177 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Barriers Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductance Exact sciences and technology Fermi surfaces Gapped graphene Graphene Massive Dirac electron Multilayers, superlattices , heterostructures Nanostructure Physics Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions Specular Andreev reflection Superconducting films and low-dimensional structures Superconductivity Tunneling Tunneling conductance |
| title | Tunneling conductance in gapped graphene-based normal metal–insulator–superconductor junctions: Case of massive Dirac electrons |
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