Tunneling conductance in gapped graphene-based normal metal–insulator–superconductor junctions: Case of massive Dirac electrons
We study the quantum transport property in a gapped graphene-based normal metal–insulator–superconductor junctions ( NG/ IG/ SG), in the limit of a thin barrier. The charged fermions in NG/ IG/ SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in nor...
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Veröffentlicht in: | Physica. C, Superconductivity Superconductivity, 2010-12, Vol.470 (22), p.1981-1985 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
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Zusammenfassung: | We study the quantum transport property in a gapped graphene-based normal metal–insulator–superconductor junctions (
NG/
IG/
SG), in the limit of a thin barrier. The charged fermions in
NG/
IG/
SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in normal-superconductor graphene-based junction and BTK formalism, the tunneling conductance’s in terms of some different electrostatic superconductor,
U
0 and barrier,
V
0 potential are obtained. Using the experimental based values of the Fermi energy in the
NG and
SG (
E
FN
and
E
FN
+
U
0, respectively), energy gap in graphene
2
mv
F
2
and superconducting order parameter,
Δ, it is shown that the conductance spectra of such system represent a new behavior, i.e. if we take
|
E
FN
-
mv
F
2
|
→
0
, it becomes as a step function of
V
0. This behavior of charge transportation can be considered as a nano switch. |
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ISSN: | 0921-4534 1873-2143 |
DOI: | 10.1016/j.physc.2010.08.010 |