Polymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than µc-Si: H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si: H TFTs has sh...

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Veröffentlicht in:	IEICE Transactions on Electronics 2010/10/01, Vol.E93.C(10), pp.1490-1494
Hauptverfasser:	TEMPLIER, François, BROCHET, Julien, AVENTURIER, Bernard, COOPER, David, ABRAMOV, Alexey, DAINEKA, Dmitri, CABARROCAS, Pere ROCA i
Format:	Artikel
Sprache:	eng
Schlagworte:	Displays Electronics Leakage current OLED polymorphous Semiconductor devices Silicon Thin film transistors Threshold voltage Variability
Online-Zugang:	Volltext
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