Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions
Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz–3 MHz) and DC bias (−1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to ne...
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Veröffentlicht in: | Solid state communications 2010-10, Vol.150 (37), p.1856-1859 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz–3 MHz) and DC bias (−1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequency–dc bias (
f
–
V
) “phase diagram” is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V
1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V
1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/j.ssc.2010.06.008 |