Photoluminescence study of thulium-doped silicon substrates for light emitting diodes
Photoluminescence in the 1.2–1.35 μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm 3+ state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0 nm, corresponding to known internal...
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| Veröffentlicht in: | Optical materials 2010-10, Vol.32 (12), p.1597-1600 |
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| creator | Lourenço, M.A. Opoku, C. Gwilliam, R.M. Homewood, K.P. |
| description | Photoluminescence in the 1.2–1.35
μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm
3+ state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0
nm, corresponding to known internal Tm
3+ transitions in the manifold from the
3H
5 to the
3H
6 ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm
3+. |
| doi_str_mv | 10.1016/j.optmat.2010.05.026 |
| format | Article |
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μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm
3+ state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0
nm, corresponding to known internal Tm
3+ transitions in the manifold from the
3H
5 to the
3H
6 ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm
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μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm
3+ state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0
nm, corresponding to known internal Tm
3+ transitions in the manifold from the
3H
5 to the
3H
6 ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm
3+.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Dislocation engineering</subject><subject>Electroluminescence</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Implantation</subject><subject>Luminescence</subject><subject>Manifolds</subject><subject>Optical materials</subject><subject>Optics</subject><subject>Optoelectronic devices</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Thulium</subject><issn>0925-3467</issn><issn>1873-1252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kM1LAzEQxYMoWD_-Aw-5iKetSTbZbi-CiF9Q0IOeQzaZ2JTdTc1kBf97UyoevczA8N4b3o-QC87mnPHmejOP2zyYPBesnJiaM9EckBlvF3XFhRKHZMaWQlW1bBbH5ARxwxgTqmlm5P11HXPspyGMgBZGCxTz5L5p9DSvpz5MQ-XiFhzF0AcbR4pThzmZDEh9TLQPH-tMYQg5h_GDuhAd4Bk58qZHOP_dp-T94f7t7qlavTw-392uKitrmSunuPVOsgWHZWd9J0xrLLdt57tGim4JojXG8EXjQUjjnFEtE6xM77kwHdSn5Gqfu03xcwLMegilRd-bEeKEuq25YLVSoijlXmlTREzg9TaFwaRvzZneQdQbvYeodxA1U7pALLbL3wcGrel9MqMN-OcVtSz5tSy6m70OStuvAEmjDTuaLiSwWbsY_n_0A8nkjN8</recordid><startdate>20101001</startdate><enddate>20101001</enddate><creator>Lourenço, M.A.</creator><creator>Opoku, C.</creator><creator>Gwilliam, R.M.</creator><creator>Homewood, K.P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20101001</creationdate><title>Photoluminescence study of thulium-doped silicon substrates for light emitting diodes</title><author>Lourenço, M.A. ; Opoku, C. ; Gwilliam, R.M. ; Homewood, K.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-d51cfd4071e9bcfb2a8ac1c8bfb642b9e28aaa176fe24adda58020a58ff12abe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Dislocation engineering</topic><topic>Electroluminescence</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Implantation</topic><topic>Luminescence</topic><topic>Manifolds</topic><topic>Optical materials</topic><topic>Optics</topic><topic>Optoelectronic devices</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Thulium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lourenço, M.A.</creatorcontrib><creatorcontrib>Opoku, C.</creatorcontrib><creatorcontrib>Gwilliam, R.M.</creatorcontrib><creatorcontrib>Homewood, K.P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optical materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lourenço, M.A.</au><au>Opoku, C.</au><au>Gwilliam, R.M.</au><au>Homewood, K.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence study of thulium-doped silicon substrates for light emitting diodes</atitle><jtitle>Optical materials</jtitle><date>2010-10-01</date><risdate>2010</risdate><volume>32</volume><issue>12</issue><spage>1597</spage><epage>1600</epage><pages>1597-1600</pages><issn>0925-3467</issn><eissn>1873-1252</eissn><abstract>Photoluminescence in the 1.2–1.35
μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm
3+ state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0
nm, corresponding to known internal Tm
3+ transitions in the manifold from the
3H
5 to the
3H
6 ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm
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| subjects | Annealing Applied sciences Dislocation engineering Electroluminescence Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Implantation Luminescence Manifolds Optical materials Optics Optoelectronic devices Photoluminescence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon substrates Thulium |
| title | Photoluminescence study of thulium-doped silicon substrates for light emitting diodes |
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