Photoluminescence study of thulium-doped silicon substrates for light emitting diodes

Photoluminescence in the 1.2–1.35 μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm 3+ state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0 nm, corresponding to known internal Tm 3+ transitions in the manifold from the 3H 5 to the 3H 6 ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm 3+.