Development of Evaluation Method for Estimating Stress-Induced Change in Drain Current in Deep-sub-micron MOSFETs

We developed a method to predict the change in the drain current in deep-sub-micron MOSFETs due to strain. The change in MOSFET drain current can be explained as a linear function of normal strains. The strain sensitivities of the MOSFETs drain current were clarified experimentally. The results indicated that drain current in N-MOSFETs increases with increases in in-plane tensile strains and normal compressive strain. Whereas, the results indicated the drain current of in P-MOSFETs increases with in-plane compressive strain parallel to the channel, and in-plane tensile strain perpendicular to the channel. The drain current also increases with normal tensile strain. The predicted values showed good agreement with the measured values. This method for predicting change in the drain current due to stress will help us to improve electronic performance of MOSFETs.