Electrical conductivity of epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-)dthin films grown by pulsed laser deposition

Epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-)d(LSCF) thin films have been grown successfully on single crystal LaAlO sub(3) substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5Aa for the 550 C deposited films. The films further exhibited electrical conductivities of as high as 2.3 x 10 super(3) S cm super(-1) at 600 C, with an activation energy of 0.09 eV. The surface exchange coefficient (k sub()cihieim of the epitaxial LSCF thin film, determined by electrical conductivity relaxation (ECR) technique, increased with the increasing temperature, and reached a value of [inline image]5.1 x 10 super(-6) S cm super(-1) at temperatures above 620 C.