Observation of Tin Plated Fretting Contacts Using FIB-SEM

In this report, Focused Ion Beam (FIB) — SEM technique was applied to observe the tin plated fretting contacts. Spatial distributions of tin, tin oxide and so on have been confirmed quantitatively in two plating thickness of 1 and 5µm.

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Veröffentlicht in:IEICE Transactions on Electronics 2010/09/01, Vol.E93.C(9), pp.1452-1455
Hauptverfasser: ITO, Tetsuya, NOMURA, Yoshiyuki, HATTORI, Yasuhiro
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container_issue 9
container_start_page 1452
container_title IEICE Transactions on Electronics
container_volume E93.C
creator ITO, Tetsuya
NOMURA, Yoshiyuki
HATTORI, Yasuhiro
description In this report, Focused Ion Beam (FIB) — SEM technique was applied to observe the tin plated fretting contacts. Spatial distributions of tin, tin oxide and so on have been confirmed quantitatively in two plating thickness of 1 and 5µm.
doi_str_mv 10.1587/transele.E93.C.1452
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_831174599</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>831174599</sourcerecordid><originalsourceid>FETCH-LOGICAL-c546t-e9585271bf380978db187731fc6cccc311260b63163f46ee498f6708039041be3</originalsourceid><addsrcrecordid>eNpdkMFOwzAMhiMEEmPwBFx6QZxakiZNkyNUG0wMDYntHKWZOzp17UgyJN6eVBs94Itl6fNn-UfoluCEZCJ_8Fa3DhpIJpImRUJYlp6hEclZFhOa0XM0wpLwWGQpu0RXzm0xJiIldITkonRgv7WvuzbqqmhZt9F7oz2so6kF7-t2ExVd67XxLlq5fpzOnuKPyds1uqh04-Dm1MdoNZ0si5d4vnieFY_z2GSM-xhkFs7mpKyowDIX65KIPKekMtyEooSkHJecEk4rxgGYFBXPscBUYkZKoGN0f_Tubfd1AOfVrnYGmka30B2cEkERHpUykPRIGts5Z6FSe1vvtP1RBKs-J_WXkwo5qUL1OYWtu5NfO6ObKiCmdsNqShlnKROBez1yW-f1BgZAW1-boPznlkPvrwyU-dRWQUt_Af6vg7k</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>831174599</pqid></control><display><type>article</type><title>Observation of Tin Plated Fretting Contacts Using FIB-SEM</title><source>J-STAGE (Japan Science &amp; Technology Information Aggregator, Electronic) Freely Available Titles - Japanese</source><creator>ITO, Tetsuya ; NOMURA, Yoshiyuki ; HATTORI, Yasuhiro</creator><creatorcontrib>ITO, Tetsuya ; NOMURA, Yoshiyuki ; HATTORI, Yasuhiro</creatorcontrib><description>In this report, Focused Ion Beam (FIB) — SEM technique was applied to observe the tin plated fretting contacts. Spatial distributions of tin, tin oxide and so on have been confirmed quantitatively in two plating thickness of 1 and 5µm.</description><identifier>ISSN: 0916-8524</identifier><identifier>ISSN: 1745-1353</identifier><identifier>EISSN: 1745-1353</identifier><identifier>DOI: 10.1587/transele.E93.C.1452</identifier><language>eng</language><publisher>Oxford: The Institute of Electronics, Information and Communication Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; FIB-SEM ; Fretting ; Ion beams ; Microelectronic fabrication (materials and surfaces technology) ; Plating ; Scanning electron microscopy ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spatial distribution ; Tin ; Tin oxides ; tin plating thickness</subject><ispartof>IEICE Transactions on Electronics, 2010/09/01, Vol.E93.C(9), pp.1452-1455</ispartof><rights>2010 The Institute of Electronics, Information and Communication Engineers</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c546t-e9585271bf380978db187731fc6cccc311260b63163f46ee498f6708039041be3</citedby><cites>FETCH-LOGICAL-c546t-e9585271bf380978db187731fc6cccc311260b63163f46ee498f6708039041be3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,1883,4024,4050,4051,23930,23931,25140,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=23464248$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ITO, Tetsuya</creatorcontrib><creatorcontrib>NOMURA, Yoshiyuki</creatorcontrib><creatorcontrib>HATTORI, Yasuhiro</creatorcontrib><title>Observation of Tin Plated Fretting Contacts Using FIB-SEM</title><title>IEICE Transactions on Electronics</title><addtitle>IEICE Trans. Electron.</addtitle><description>In this report, Focused Ion Beam (FIB) — SEM technique was applied to observe the tin plated fretting contacts. Spatial distributions of tin, tin oxide and so on have been confirmed quantitatively in two plating thickness of 1 and 5µm.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FIB-SEM</subject><subject>Fretting</subject><subject>Ion beams</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Plating</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spatial distribution</subject><subject>Tin</subject><subject>Tin oxides</subject><subject>tin plating thickness</subject><issn>0916-8524</issn><issn>1745-1353</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpdkMFOwzAMhiMEEmPwBFx6QZxakiZNkyNUG0wMDYntHKWZOzp17UgyJN6eVBs94Itl6fNn-UfoluCEZCJ_8Fa3DhpIJpImRUJYlp6hEclZFhOa0XM0wpLwWGQpu0RXzm0xJiIldITkonRgv7WvuzbqqmhZt9F7oz2so6kF7-t2ExVd67XxLlq5fpzOnuKPyds1uqh04-Dm1MdoNZ0si5d4vnieFY_z2GSM-xhkFs7mpKyowDIX65KIPKekMtyEooSkHJecEk4rxgGYFBXPscBUYkZKoGN0f_Tubfd1AOfVrnYGmka30B2cEkERHpUykPRIGts5Z6FSe1vvtP1RBKs-J_WXkwo5qUL1OYWtu5NfO6ObKiCmdsNqShlnKROBez1yW-f1BgZAW1-boPznlkPvrwyU-dRWQUt_Af6vg7k</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>ITO, Tetsuya</creator><creator>NOMURA, Yoshiyuki</creator><creator>HATTORI, Yasuhiro</creator><general>The Institute of Electronics, Information and Communication Engineers</general><general>Oxford University Press</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2010</creationdate><title>Observation of Tin Plated Fretting Contacts Using FIB-SEM</title><author>ITO, Tetsuya ; NOMURA, Yoshiyuki ; HATTORI, Yasuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c546t-e9585271bf380978db187731fc6cccc311260b63163f46ee498f6708039041be3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FIB-SEM</topic><topic>Fretting</topic><topic>Ion beams</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Plating</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spatial distribution</topic><topic>Tin</topic><topic>Tin oxides</topic><topic>tin plating thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ITO, Tetsuya</creatorcontrib><creatorcontrib>NOMURA, Yoshiyuki</creatorcontrib><creatorcontrib>HATTORI, Yasuhiro</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ITO, Tetsuya</au><au>NOMURA, Yoshiyuki</au><au>HATTORI, Yasuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Observation of Tin Plated Fretting Contacts Using FIB-SEM</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2010</date><risdate>2010</risdate><volume>E93.C</volume><issue>9</issue><spage>1452</spage><epage>1455</epage><pages>1452-1455</pages><issn>0916-8524</issn><issn>1745-1353</issn><eissn>1745-1353</eissn><abstract>In this report, Focused Ion Beam (FIB) — SEM technique was applied to observe the tin plated fretting contacts. Spatial distributions of tin, tin oxide and so on have been confirmed quantitatively in two plating thickness of 1 and 5µm.</abstract><cop>Oxford</cop><pub>The Institute of Electronics, Information and Communication Engineers</pub><doi>10.1587/transele.E93.C.1452</doi><tpages>4</tpages></addata></record>
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source J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese
subjects Applied sciences
Electronics
Exact sciences and technology
FIB-SEM
Fretting
Ion beams
Microelectronic fabrication (materials and surfaces technology)
Plating
Scanning electron microscopy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spatial distribution
Tin
Tin oxides
tin plating thickness
title Observation of Tin Plated Fretting Contacts Using FIB-SEM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T20%3A20%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Observation%20of%20Tin%20Plated%20Fretting%20Contacts%20Using%20FIB-SEM&rft.jtitle=IEICE%20Transactions%20on%20Electronics&rft.au=ITO,%20Tetsuya&rft.date=2010&rft.volume=E93.C&rft.issue=9&rft.spage=1452&rft.epage=1455&rft.pages=1452-1455&rft.issn=0916-8524&rft.eissn=1745-1353&rft_id=info:doi/10.1587/transele.E93.C.1452&rft_dat=%3Cproquest_cross%3E831174599%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=831174599&rft_id=info:pmid/&rfr_iscdi=true