Grinding characteristics, material removal and damage formation mechanisms in high removal rate grinding of silicon carbide

Development of advanced ceramics such as silicon carbide has gained significant importance because of their desirable properties. However, their engineering applications are still limited owing to the limitations in developing damage-free and economical machining techniques. It is often desired to i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:International journal of machine tools & manufacture 2010-12, Vol.50 (12), p.1077-1087
Hauptverfasser: Agarwal, Sanjay, Venkateswara Rao, P.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Development of advanced ceramics such as silicon carbide has gained significant importance because of their desirable properties. However, their engineering applications are still limited owing to the limitations in developing damage-free and economical machining techniques. It is often desired to increase the machining rate to improve productivity while maintaining the desired surface integrity. The success of this approach, however, requires a fundamental understanding of the material removal and damage formation mechanism in grinding. In this paper, high removal rate grinding of silicon carbide was investigated with respect to material removal and basic grinding parameters using a diamond grinding wheel. The results showed that the material removal was primarily due to the microfracture and grain dislodgement under the grinding conditioned selected. For grain dislodgement removal mode, the relationship for the removal rate in scratching based on a simple fracture mechanics analysis has been established. This research provides valuable insights into the surface and subsurface integrity and material removal mechanism during high removal rate grinding of silicon carbide.
ISSN:0890-6955
1879-2170
DOI:10.1016/j.ijmachtools.2010.08.008