Characterization and Analysis of the Temperature-Dependent on -Resistance in AlGaN/GaN Lateral Field-Effect Rectifiers

The on-resistance and its temperature dependence of the high electron mobility transistor (HEMT)-compatible lateral field-effect rectifier (L-FER) are investigated. Three types of transfer length method (TLM) patterns are utilized to extract the temperature-dependent electrical parameters of the res...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-08, Vol.57 (8), p.1924-1929
Hauptverfasser:	King-Yuen Wong, Wanjun Chen, Chen, Kevin J
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN Aluminum gallium nitride Applied sciences Computer simulation Devices Electrical resistance measurement Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride Gallium nitrides High electron mobility transistors lateral field-effect rectifier (L-FER) Logic gates Mathematical models parameter extraction Rectifiers Resistance semiconductor device modeling Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Temperature measurement thermal resistance Transistors
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Beschreibung
Zusammenfassung:	The on-resistance and its temperature dependence of the high electron mobility transistor (HEMT)-compatible lateral field-effect rectifier (L-FER) are investigated. Three types of transfer length method (TLM) patterns are utilized to extract the temperature-dependent electrical parameters of the resistance model. The technique presented in this paper delivers a direct and simple methodology for the investigation of the temperature dependence of the on-resistance in the L-FER. The simulated output characteristics of the L-FER are in good agreement with the experimental results.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2010.2051245