Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaO x Oxidation

This investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under the active region and combined with the GaN material and hbox OH - ions to generate hbox GaO x oxidation grains. The hbox GaO x generation speed was fast with high reverse voltage applied to micro-LEDs, and the expansion of hbox GaO x dimensions degraded the opto-electrical characteristics and eventually caused failure of the WB AC-LED. The root-mean-square reverse voltage dropped across each micro-LED from - 13.1 to - 6.7 V with different micro-LEDs array arrangements extended the WB AC-LED lifetime from being less than 650 h to more than 1600 h, respectively.