Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes

We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. Th...

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Veröffentlicht in:Optics express 2010-10, Vol.18 (22), p.23030-23034
Hauptverfasser: Kim, Byung-Jae, Mastro, Michael A, Hite, Jennifer, Eddy, Jr, Charles R, Kim, Jihyun
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Sprache:eng
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Zusammenfassung:We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.18.023030