Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures

The light output power and wall‐plug efficiency of the Si nanocrystal (nc‐Si) light‐emitting diode (LED) were significantly enhanced by employing the multiple‐luminescent structures. This improvement was attributed to a strong confinement of carriers in the SiNx luminescent layers containing the nc‐...

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Veröffentlicht in:	Advanced materials (Weinheim) 2010-11, Vol.22 (44), p.5058-5062
Hauptverfasser:	Huh, Chul, Kim, Kyung-Hyun, Kim, Bong Kyu, Kim, Wanjoong, Ko, Hyunsung, Choi, Chel-Jong, Sung, Gun Yong
Format:	Artikel
Sprache:	eng
Schlagworte:	Electroluminescence Electronics - instrumentation Light Light-Emitting Diode Luminescence Luminescent Agents - chemistry Multiple-Luminescent Structure Nanoparticles - chemistry Nanoparticles - ultrastructure Optics and Photonics - instrumentation Silicon - chemistry Silicon Nanocrystal Wall-Plug Efficiency
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Beschreibung
Zusammenfassung:	The light output power and wall‐plug efficiency of the Si nanocrystal (nc‐Si) light‐emitting diode (LED) were significantly enhanced by employing the multiple‐luminescent structures. This improvement was attributed to a strong confinement of carriers in the SiNx luminescent layers containing the nc‐Si due to the band offset between the luminescent layer and barrier layer.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201001572