Investigations for InAs/GaAs multilayered quantum-dot structure treated by high energy proton irradiation

This paper focuses on the high energy proton irradiation effect of InAs/GaAs multilayers quantum-dot (QD) wafer and photodetector. With high energy proton path simulation, the releases of proton energy and trap distribution in QD multilayers are predicted well. Treated by 1 and 3 MeV protons, all protons almost penetrate the multilayers of QD structures and stop deeply in GaAs substrate. InAs QD multilayer structures/Infrared photodetector have been irradiated by protons with different energies (1 and 3 MeV) and doses (1 × 10 9∼ 1 × 10 13 protons/cm 2). The photoluminescence (PL) and photoresponsivity (PR) spectrum of samples were measured and discussed with as grown and post irradiation.