InGaN-based light-emitting solar cells with a pattern-nanoporous p-type GaN:Mg layer

InGaN-based light-emitting solar cells (LESCs) with a nanoporous micro-pattern array (NMPA) p-type GaN:Mg structures were fabricated through a photoeletrochemical (PEC) process. The photovoltaic property of these NMPA devices was analyzed. The higher light output power and light absorption propertie...

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Veröffentlicht in:	Thin solid films 2010-10, Vol.518 (24), p.7377-7380
Hauptverfasser:	Chen, Kuei-Ting, Lin, Chia-Feng, Lin, Chun-Min, Yang, Chung-Chieh, Jiang, Ren-Hao
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arrays Cross-disciplinary physics: materials science rheology Devices Electronics Energy Exact sciences and technology InGaN-based optoelectronic device Materials science Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Natural energy Optoelectronic devices Other semiconductors Other topics in nanoscale materials and structures Photoeletrochemical (PEC) process Photovoltaic cells Photovoltaic conversion Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solar cells Solar cells. Photoelectrochemical cells Solar energy Specific materials
Online-Zugang:	Volltext
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