V-doping effects on ferroelectric properties of K0.5Bi4.5Ti4O15 thin films

V-doped K0.5Bi4.5Ti4O15 (K0.5Bi4.5 a x/3Ti4 a x V x O15, KBTiV-x, x =0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750AC for 3min in an o...

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Veröffentlicht in:	Thin solid films 2010-09, Vol.518 (22), p.6514-6517
Hauptverfasser:	JIN WON KIM, DO, Dalhyun, SANG SU KIM
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Capacitors Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Density Electrical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Ferroelectric materials Ferroelectricity Growth from solutions Leakage current Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Thin films Vanadium
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Zusammenfassung:	V-doped K0.5Bi4.5Ti4O15 (K0.5Bi4.5 a x/3Ti4 a x V x O15, KBTiV-x, x =0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750AC for 3min in an oxygen atmosphere. Among them, KBTiV-0.03 thin film exhibited the most outstanding electrical properties. The value of remnant polarization (2P r ) was 75I14C/cm2 at an applied electric field of 366kV/cm. The leakage current density of the thin film capacitor was 5.01A-10a 8 at 100kV/cm, which is approximately one order of magnitude lower than that of pure K0.5Bi4.5Ti4O15 thin film capacitor. We found that V doping is an effective method for improving the ferroelectric properties of K0.5Bi4.5Ti4O15 thin film.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2010.02.001