Elastic strain tensor measurement using electron backscatter diffraction in the SEM

The established electron backscatter diffraction (EBSD) technique for obtaining crystallographic information in the SEM has been adapted to permit elastic strain measurement. Basically, the displacement of crystallographic features in an EBSD pattern, such as zone axes, which result from strain in a...

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Veröffentlicht in:Journal of electron microscopy 2010-08, Vol.59 (S1), p.S155-S163
Hauptverfasser: Dingley, David J., Wilkinson, Angus J., Meaden, Graham, Karamched, Phani S.
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Sprache:eng
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Zusammenfassung:The established electron backscatter diffraction (EBSD) technique for obtaining crystallographic information in the SEM has been adapted to permit elastic strain measurement. Basically, the displacement of crystallographic features in an EBSD pattern, such as zone axes, which result from strain in a crystal, is determined by comparing those same features as they appear in a pattern from an unstrained region of the crystal. The comparison is made by cross-correlation of selected regions in the two patterns. Tests show that the sensitivity to displacement measurement is 1 part in 10 000, which translates to a strain sensitivity of 2 parts in 10 000. Eight components of the strain tensor are determined directly and the ninth is calculated using the fact that the free surface of the sample is traction-free. Examples discussed are taken from studies of a lenticular fracture in germanium, the strain distribution surrounding a carbide precipitate in a nickel base alloy and grain boundary studies in another nickel base alloy.
ISSN:0022-0744
1477-9986
2050-5701
DOI:10.1093/jmicro/dfq043